Contact metallurgy optimization for ohmic contacts to InP
نویسندگان
چکیده
منابع مشابه
Specific contact resistance measurements of ohmic contacts to semiconducting diamond
A simplified version of the specific contact resistance measurement scheme of G. K. Reeves [Solid State Electronics 23, 487 (1980)] has been developed. Its applicability to semiconducting diamond is demonstrated using four sample types: epitaxial films doped to mid 1019 acceptors/cm3 on (100) and (110) type IIa substrates; type IIb diamonds 0.25 mm thick, and type IIb diamonds thinned to 0.035-...
متن کاملDependence of contact resistance on current for ohmic contacts to quantized Hall resistors
The dependence of contact resistance on current has been measured for a large number of ohmic contacts to quantized Hall resistors under quantum Hall effect conditioDS.Five different functional forms of current dependence are observed at low currents. The trend from best to worst quality can be correlated with the density of defects in the contact, regardless of the physical cause of the defect...
متن کاملMethods for fabricating Ohmic contacts to nanowires and nanotubes
A comparison of methods to create Ohmic contacts to semiconductor nanowires NWs and carbon nanotubes CNTs is presented. A Ni/Au lift-off metallization was used to contact GaN and In2O3 NWs and CNTs using electron-beam e-beam or optical lithography. In order to render the metal-semiconductor contacts Ohmic, e-beam-processed devices are found to require a postfabrication, high-temperature anneal,...
متن کاملUltra-low-loss ohmic contacts on heavily doped n-type InGaAs and InGaAsP for InP based photonic membranes
We present AgGe based ohmic contacts to InP membranes with significantly reduced optical losses and contact resistances. Thanks to the high solubility of Si in InGaAs and InGaAsP, heavily doped n-type contact layers are grown on InP wafers. This high doping concentration gives rise to annealing-free ohmic contacts and low contact resistances in the level of 10−7 Ω cm2. It also leads to strong b...
متن کاملOhmic contacts on sputtered a-Si : H
2014 We show that ohmic contacts can be obtained by hydrogen depletion in a-Si : H. We obtain these ohmic contacts by diffusion of hydrogen into adjacent films of pure a-Si at 190 °C or Pd at room temperature. J. Phrsigcue LETTRES 41 (19RO) L-27 L-29 15 JANVIER 1980, Classification Physics Abstracts 73.40N Following the work of the Dundee [1] and R.C.A. [2] groups, several laboratories have tri...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Microelectronic Engineering
سال: 1991
ISSN: 0167-9317
DOI: 10.1016/0167-9317(91)90203-p